Preparation of Molybdenum Oxide Films by means of Reactive Sputtering
نویسندگان
چکیده
منابع مشابه
Structural, Electrical and Optical Properties of Molybdenum Oxide Thin Films Prepared by Post-annealing of Mo Thin Films
Molybdenum thin films with 50 and 150 nm thicknesses were deposited on silicon substrates, using DC magnetron sputtering system, then post-annealed at different temperatures (200, 325, 450, 575 and 700°C) with flow oxygen at 200 sccm (standard Cubic centimeter per minute). The crystallographic structure of the films was obtained by means of x-ray diffraction (XRD) analysis. An atomic force micr...
متن کاملStructural, Electrical and Optical Properties of Molybdenum Oxide Thin Films Prepared by Post-annealing of Mo Thin Films
Molybdenum thin films with 50 and 150 nm thicknesses were deposited on silicon substrates, using DC magnetron sputtering system, then post-annealed at different temperatures (200, 325, 450, 575 and 700°C) with flow oxygen at 200 sccm (standard Cubic centimeter per minute). The crystallographic structure of the films was obtained by means of x-ray diffraction (XRD) analysis. An atomic force micr...
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Purpose: Investigation the effect of varying r.f. power and oxygen flow rates during deposition on the electrical properties of copper oxide thin films prepared by reactive magnetron sputtering Design/methodology/approach: The films were characterised by AFM, XPS, four point electrical resistivity probe measurements and spectrophotometry. Findings: The electrical sheet resistance of the films w...
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In the current research, the optimum conditions for the electrolytic deposition of TiO2 coatings on titanium pieces were experimentally investigated. Flat pieces of commercially available titanium with dimensions of 50 x20 x3 mm were used as the anode and cathode electrodes. The coatings were applied on the cathode in an electrolyte solution essentially from water and methanol, containing diffe...
متن کاملResistance switching properties of molybdenum oxide films
Resistive random access memory (ReRAM) properties in which the resistance of the insulating material drastically changes by voltage application have recently attracted much attention. In this work, molybdenum oxide prepared by thermal oxidation of Mo films was studied to investigate its potential as a material exhibiting ReRAM switching. The samples oxidized between 400 and 600 C were composed ...
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ژورنال
عنوان ژورنال: SHINKU
سال: 1972
ISSN: 0559-8516,1880-9413
DOI: 10.3131/jvsj.15.15